1、BIOS is typically stored in a flash memory device on the system's motherboard.───BIOS通常存储在XiTong主板的一个闪存设备中。
2、The multi-port memory device contains memory banks that may be accessed via the two or more ports.───该多端口存储器件包含可经由两个或多个端口访问的存储器组。
3、Command data for controlling the flash memory device is input to the controller 218.───用于控制快闪存储器装置的命令数据输入到KongZhiQi218。
4、The only Write operation permitted on a flash memory device is to change a bit from a one to a zero.───flash内存设备中惟一允许的WriteCao作是将1修改为0。
5、Such a flash memory device is sometimes referred to as a binary flash memory device because each memory element can store one bit of data.───这种快闪存储器装置有时称为二元快闪存储器装置，因为每个存储器元件可存储一个数据位。
6、The card served as a memory device, on which the text would be written in a code based on magnetized spots.───该卡用于存储设备，文本将写在其中的以磁化点为基础的代码上。
7、Each bit of data in a flash memory device is stored in a transistor called a floating gate.───每一个比特的数据储存在快闪记忆装置称为浮栅晶体管。
8、FIG. 14 depicts programming pulses applied to a cycled memory device.───图14描绘施加于循环存储器装置的编程脉冲。
9、The semiconductor memory device includes a bit line sense amplifier connected to a pair of bit lines.───该半导体存储器件包含连接到一对位线的位线感测放大器。
memory device（英语使用场景）
1、Such a flash memory device is sometimes referred to as a binary flash memory device because each memory element can store one bit of data.
2、Ge nanocrystal memory device can be programmed at a relatively low voltage and high speed.
3、Semiconductor memory device, display device, and portable electronic apparatus.
4、A memory device having a memory array of nonvolatile memory elements also includes one or more security rows (65) (or columns 75) of security bits that can be programmed to a locked status.
5、Command data for controlling the flash memory device is input to the controller 218.
6、A non-volatile integrated circuit memory device may include a semiconductor substrate having first and second electrically isolated wells of a same conductivity type.
7、Electronic memory device is a new type of home electronics devices, has broad market prospects.
8、The invention provides a semiconductor memory device.
9、The semiconductor memory device includes a bit line sense amplifier connected to a pair of bit lines.
memory device（意思翻译）
[计]存储设备；记忆装置
memory device（相似词语短语）
1、memory───n.记忆，记忆力；内存，[计]存储器；回忆；n.(Memory)人名；(英)梅默里
2、device status───[计]设备状态
3、device───n.装置；策略；图案；设备；终端
4、safety device───[安全]安全装置；保护装置；[安全]保险装置；[安全]安全防护装置；过载安全装置
5、leveling device───水平调节装置；液面控制装置；水平调整装置
6、actuator device───执行机构装置
7、eikon device───eikon设备
8、device control───[计]设备控制；设备控制符，装置控制
9、tech device───技术设备
memory device（双语使用场景）
1、BIOS is typically stored in a flash memory device on the system's motherboard.───BIOS通常存储在XiTong主板的一个闪存设备中。
2、The multi-port memory device contains memory banks that may be accessed via the two or more ports.───该多端口存储器件包含可经由两个或多个端口访问的存储器组。
3、Command data for controlling the flash memory device is input to the controller 218.───用于控制快闪存储器装置的命令数据输入到KongZhiQi218。
4、The only Write operation permitted on a flash memory device is to change a bit from a one to a zero.───flash内存设备中惟一允许的WriteCao作是将1修改为0。
5、Such a flash memory device is sometimes referred to as a binary flash memory device because each memory element can store one bit of data.───这种快闪存储器装置有时称为二元快闪存储器装置，因为每个存储器元件可存储一个数据位。
6、The card served as a memory device, on which the text would be written in a code based on magnetized spots.───该卡用于存储设备，文本将写在其中的以磁化点为基础的代码上。
7、Each bit of data in a flash memory device is stored in a transistor called a floating gate.───每一个比特的数据储存在快闪记忆装置称为浮栅晶体管。
8、FIG. 14 depicts programming pulses applied to a cycled memory device.───图14描绘施加于循环存储器装置的编程脉冲。
9、The semiconductor memory device includes a bit line sense amplifier connected to a pair of bit lines.───该半导体存储器件包含连接到一对位线的位线感测放大器。
memory device（英语使用场景）
1、Such a flash memory device is sometimes referred to as a binary flash memory device because each memory element can store one bit of data.
2、Ge nanocrystal memory device can be programmed at a relatively low voltage and high speed.
3、Semiconductor memory device, display device, and portable electronic apparatus.
4、A memory device having a memory array of nonvolatile memory elements also includes one or more security rows (65) (or columns 75) of security bits that can be programmed to a locked status.
5、Command data for controlling the flash memory device is input to the controller 218.
6、A non-volatile integrated circuit memory device may include a semiconductor substrate having first and second electrically isolated wells of a same conductivity type.
7、Electronic memory device is a new type of home electronics devices, has broad market prospects.
8、The invention provides a semiconductor memory device.
9、The semiconductor memory device includes a bit line sense amplifier connected to a pair of bit lines.